Inc6006as1
WebFOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO ETHERNET Datasheet(PDF) - List of Unclassifed Manufacturers - 2SC5482 Datasheet, FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO, Isahaya Electronics Corporation - 2SC5397 Datasheet, Isahaya Electronics … WebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE, INC6006AS1 Datasheet, INC6006AS1 circuit, INC6006AS1 data sheet : ISAHAYA, …
Inc6006as1
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Webinc6006as1: 151kb / 4p: for low frequency amplify application silicon npn epitaxial type more results. link url ... WebDatasheet. Description. Isahaya Electronics Cor... INC6006AP1. 156Kb / 4P. FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE. Search Partnumber …
WebSierra Wireless‘ 5G Managed Network Service which offers guaranteed performance and uptime for business-critical applications. Greenconn’s Newly-Launched 2.5mm Pitch … WebINC6006AS1 Datasheet, Equivalent, Cross Reference Search. Type Designator: INC6006AS1 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.6 W. …
WebINA6006AP1 Datasheet (PDF) INA6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INA6006AP1 is a … WebALLPARTS PARTS LIST [I] Korea HQ. : Rm 1707, 1st Block, Ace High Tech City, 3Ga 54-20, Munrae-dong, Yeongdeungpo-gu, Seoul, Korea. ( Tel : 82-2-2634-6328 Fax : 82-2-2634-7328 ) China Office. : Rm 704, A block, Huangdu square, #3008 Yitian road, Futian district, Shenzhen city, Guangdong. province, China ( Tel : 86-755-8321-2156~7 Fax : 86-755 ...
INC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for easy mounting. ・High voltage VCEO = 160V ・Low voltage VCE(sat) = 0.2V(MAX) ・Complementary : INA6006AS1 APPLICATION High voltage switching. OUTLINE DRAWING UNIT:mm MAXIMUM RATING(Ta=25℃)
WebHigh voltage VCEO = -150V Low voltage VCE(sat) = -0.5V(MAX) Small capacitance Cob=2.8pF(TYP) Complementary INC6006AS1. APPLICATION. PARAMETER Collector to … sneath group holdings limitedWebFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Datasheet(PDF) - Isahaya Electronics Corporation - INC6006AS1 Datasheet, FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE, Isahaya Electronics Corporation - 2SC5383_10 Datasheet, Isahaya Electronics Corporation - 2SC5814 Datasheet sneathiellaWebINC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNIT INC6006AP1 is a silicon NPN transistor. 4.6 MAXIt is designed with high voltage. 1.51.6FEATURE Small package for easy mounting. High voltage VCEO = 160V CE BLow voltage VCE (sat) = 0.2V (MAX) Complementary road trip of a lifetimeWebThe INA851 is the industry's first high-precision instrumentation amplifier with fully differential outputs. This device is optimized to drive inputs of modern high performance analog-to-digital converters (ADCs) with fully differential inputs. The INA851 operates over a very-wide, single-supply or dual-supply range. The roadtrip officesWebINC6006AS1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for eas y mounting. ・High voltage V. CEO = 160V ・Low voltage V. CE(sat) = 0.2V(MAX) ・Complementary : INA6006AS1 . APPLICATION . High voltage switching. sneathiellaleshttp://ec2-52-68-2-140.ap-northeast-1.compute.amazonaws.com/product/Search/Discreet/ja/111 sneath funeral homeWeb製品・サービスに関するお問い合わせ 大阪営業本部. 06-4709-7218 road trip oddities